Low-frequency 1/f noise in MoS2 transistors: Relative contributions of the channel and contacts
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چکیده
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منابع مشابه
Noise Characteristics of MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors (TFTs) with thin (2–3 atomic layers) and thick (15–18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/ f noise in thick Mo...
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Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between ...
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Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The ...
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